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功率器件研发工程师 MOSFET R&D Engineer

职位描述:

  • 与团队成员合作开发功率器件,如MOSFET/IGBT/BCD等制程工艺;
  • 执行DOE流程设计和优化,及时地提供满足项目要求和里程碑的解决方案;
  • 使用系统化的6 sigma方法,执行统计数据分析并解决问题;
  • 参与评估新工艺,设备和材料。将工艺制程技术从TD转移到运营量产;
  • 与内部和外部客户合作以满足他们的需求。

Job Description:

  • Develop power devices, such as MOSFET/IGBT/BCD process, in cooperation with team members.
  • Implement DOE process design and optimization to provide timely solutions to meet project requirements and milestones;
  • Using systematic 6 Sigma method to perform statistical data analysis and solve problems.
  • Participate in the evaluation of new processes, equipment and materials. Transfer process technology from TD to mass production;
  • Cooperate with internal and external customers to meet their needs.

任职要求:

  • 大学本科以上学历,电子、微电子等相关专业;
  • 良好的英文听说读写能力;
  • 具有较强的沟通能力,应变能力、组织能力,注重团队合作;
  • 具有自主解决问题的能力;

Job Qualifications

  • Bachelor degree or above, major in electronics, microelectronics, etc.
  • Good English listening, speaking, reading and writing skills;
  • Strong communication skills, adaptability, organizational ability, and team work;
  • Ability to solve problems independently;
 
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